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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2333 DESCRIPTION *With TO-3PML package *High breakdown voltage *Built-in damper diode APPLICATIONS *Color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 5 2.5 80 150 -55~150 UNIT V V V A A W 1 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2333 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=200mA , IC=0 IC=4A ;IB=0.8A 5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V A ICBO Collector cut-off current VCB=500V; IE=0 10 hFE DC current gain IC=1A ; VCE=5V 8 VF Diode forward voltage IF=5A 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2333 Fig.2 Outline dimensions 3 |
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